TEA1995T Synchronous Rectifier Controller for SMPS High Efficiency 15µA Startup 650µA Operation CCM/DCM/QR Mode 200kHz Max Advanced Protection

TEA1995T Synchronous Rectifier Controller for SMPS High Efficiency 15µA Startup 650µA Operation CCM/DCM/QR Mode 200kHz Max Advanced Protection

Features

2.1 Efficiency features

• Adaptive gate drive for maximum efficiency at any load

• Supply current in energy save operation below 200 μA

2.2 Application features

• Wide supply voltage range from 4.5 V to 38 V

• Dual synchronous rectification for LLC resonant in SO8 package

• Synchronous rectification for multi-output flyback converters

• Supports 5 V operation with logic level SR MOSFETs

• Differential inputs for sensing the drain and source voltages of each SR MOSFET

2.3 Control features

• SR control without minimum on-time

• Adaptive gate drive for fast turn-off at the end of conduction

• UnderVoltage LockOut (UVLO) protection with active gate pull-down

Applications

The TEA1995T is intended for resonant power supplies. In such applications, it can drive two external synchronous rectifier MOSFETs for the rectification of the voltages on the two secondary windings of the transformer. These MOSFETs replace diodes. It can be used in all power supplies requiring high efficiency:

• Adapters

• Power supplies for desktop PC and all-in-one PC

• Power supplies for television

• Power supplies for servers

Description

The TEA1995T is the first product of a new generation of Synchronous Rectifier (SR) controller ICs for switched mode power supplies. It incorporates an adaptive gate drive method for maximum efficiency at any load.

The TEA1995T is a dedicated controller IC for synchronous rectification on the secondary side of resonant converters. It has two driver stages for driving the SR MOSFETs, which rectify the outputs of the central tap secondary transformer windings. The two gate driver stages have their own sensing inputs and operate independently.

The TEA1995T can also be used in multi-output flyback converters with the SR MOSFET placed at the low side.

The TEA1995T is fabricated in a Silicon-On-Insulator (SOI) process.

INFORMATION

Drawing

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