BSM25GD120DLCE3224 1200V/25A IGBT Module Dual Configuration Low VCE(sat) High Speed Switching Low Loss Built-in NTC Isolated Baseplate Industrial Grade for UPS & Solar Inverters
Features
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Voltage/Current Rating: 1200 V / 25 A
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Configuration: Dual IGBT
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Low Saturation Voltage: VCE(sat) for high efficiency.
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High-Speed Switching: Low switching losses.
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Low Power Losses: Optimized for overall system efficiency.
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Built-in NTC Thermistor: For thermal monitoring and protection.
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Isolated Baseplate: Simplifies heatsink assembly and improves safety.
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Industrial Grade Reliability: Designed for long service life.
Applications
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Solar Inverters: Used in the power conversion stage of residential and commercial photovoltaic systems.
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Uninterruptible Power Supplies (UPS): Employed in the inverter section of online and line-interactive UPS systems.
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Industrial Motor Drives: For controlling AC motors in pumps, fans, and compressors.
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Welding Equipment: Provides the switching core for industrial welding machines.
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Induction Heating: Used in the power circuits of induction heating and melting systems.
Description
The BSM25GD120DLCE3224 is a high-performance dual IGBT module, rated for 1200V and 25A. It is engineered to deliver high efficiency and reliability in demanding power conversion applications. The module features a low collector-emitter saturation voltage (VCE(sat)) and is optimized for high-speed switching, resulting in low switching and conduction losses.
This robust module includes a built-in NTC thermistor for accurate temperature monitoring and protection, and features an isolated baseplate for easy and safe mounting to a heatsink. Its industrial-grade construction ensures long-term stability and performance, making it a durable solution for a wide range of power electronics.
INFORMATION
| Manufacturer: |
Infineon |
| Product Category: |
IGBT Modules |
| Product: |
IGBT Silicon Modules |
| Configuration: |
Hex |
| Collector- Emitter Voltage VCEO Max: |
1200 V |
| Collector-Emitter Saturation Voltage: |
2.1 V |
| Continuous Collector Current at 25 C: |
50 A |
| Gate-Emitter Leakage Current: |
400 nA |
| Pd – Power Dissipation: |
200 W |
| Minimum Operating Temperature: |
– 40 C |
| Maximum Operating Temperature: |
+ 125 C |
| Height: |
17 mm |
| Length: |
107.5 mm |
| Width: |
45 mm |
| Brand: |
Infineon Technologies |
| Mounting Style: |
Screw |
| Maximum Gate Emitter Voltage: |
+/- 20 V |
| Product Type: |
IGBT Modules |
| Subcategory: |
IGBTs |
Drawing
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